FGH12040WD-F155

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-

SKU:658895a0b2cc Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：100 A
Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 40A
Power - Max：428 W
Switching Energy：4.1mJ (on), 1mJ (off)
Input Type：Standard
Gate Charge：226 nC
Td (on/off) @ 25°C：45ns/560ns
Test Condition：600V, 40A, 23Ohm, 15V
Reverse Recovery Time (trr)：71 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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FGH12040WD-F155

Overview

The FGH12040WD-F155 is a single Field Stop (FS) Insulated Gate Bipolar Transistor manufactured by onsemi. It features a Trench gate architecture designed for high-efficiency power switching applications. The device is rated for a collector-to-emitter breakdown voltage of 1200 V and supports a continuous collector current of 40 A, with a peak pulse current capability of 100 A. The component dissipates up to 428 W of power and is housed in a TO-247-3 through-hole package.

Feature Summary

Field Stop Trench technology for optimized switching performance
High voltage blocking capability suitable for industrial inverters
Robust thermal dissipation via TO-247-3 package

Applications

Industrial motor drives
Switch-mode power supplies
Inverter circuits

Procurement Notes

Verify the specific suffix F155 against official datasheets to confirm exact electrical tolerances and marking codes. Confirm availability status as distribution channels may list obsolete or discontinued inventory. Ensure the TO-247-3 lead configuration matches the target PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component for designs requiring 1200 V isolation and moderate current handling up to 40 A. The Field Stop structure offers improved switching characteristics compared to standard planar IGBTs. Evaluate thermal management solutions to handle the specified 428 W dissipation rating under worst-case operating conditions.

Part Context

This part belongs to onsemi's discrete IGBT portfolio, specifically utilizing Trench Field Stop technology. It serves as a replacement for older planar IGBT designs in medium-power applications. The product line targets efficiency improvements in industrial automation and power conversion systems.

Replacement Considerations

Check for direct pin-compatible substitutes within the same voltage and current class. Verify that alternative components maintain similar saturation voltage and switching speed characteristics to ensure circuit compatibility without redesign.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.