FGH15T120SMD-F155

Overview

The FGH15T120SMD-F155 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Field Stop Trench technology and is housed in a TO-247G-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 15 A at 25 °C, with a peak pulsed current rating of 30 A. Key electrical parameters include a saturation voltage of 1.9 V, a gate-emitter leakage current of 400 nA, and a power dissipation capacity of 333 W. It operates within a temperature range of -55 °C to +175 °C.

Feature Summary

• Field Stop Trench architecture designed to minimize conduction and switching losses.
• Positive temperature coefficient of the collector-emitter saturation voltage facilitates safe parallel operation for higher current applications.
• Robust short-circuit withstand capability ensures protection during fault conditions.

Applications

• High-frequency energy infrastructure systems such as solar inverters and uninterruptible power supplies.
• EV charging power conversion units requiring efficient high-voltage switching.
• Industrial motor drives and battery chargers utilizing fast-switching topologies.

Procurement Notes

Verify the specific suffix F155 against official datasheets to confirm packaging details and compliance status. Ensure the procurement channel provides valid traceability documentation. Confirm that the component matches the required thermal and electrical specifications for the target application before finalizing orders.

Selection Notes

Select this component when a 1200 V IGBT with low conduction loss is required for high-efficiency power conversion. The TO-247G-3 package suits designs needing robust thermal management via heatsink mounting. Consider the 15 A continuous current rating relative to the expected load profile and ambient operating temperatures to ensure reliable performance.

Part Context

This device belongs to the FGH series of Field Stop Trench IGBTs from onsemi. These transistors are engineered for high-power density applications where efficiency and switching speed are critical. The series targets modern energy infrastructure and industrial markets demanding superior performance over traditional non-punch-through technologies.

Replacement Considerations

Direct replacements must match the 1200 V rating, 15 A current capacity, and TO-247G-3 package. Verify pinout compatibility and thermal resistance characteristics. Cross-reference with other FS-series IGBTs from the same manufacturer or equivalent industry standards ensuring identical electrical limits.