FGH20N60SFDTU

Overview

The onsemi FGH20N60SFDTU is a Field Stop IGBT with an integrated anti-parallel diode, housed in a TO-247-3LD package. It features a collector-emitter voltage (VCES) of 600 V and a continuous collector current (IC) of 20 A at 100°C case temperature. The device exhibits a low saturation voltage of 2.2 V at IC = 20 A and VGE = 15 V. Switching characteristics include a turn-on delay time of 13 ns and a fall time of 20 ns at TC = 25°C. Thermal resistance from junction to case is 0.76 °C/W for the IGBT and 2.51 °C/W for the diode.

Feature Summary

• Utilizes novel field stop technology to optimize performance by minimizing conduction and switching losses.
• Provides high input impedance suitable for direct drive applications.
• Includes an integrated fast recovery anti-parallel diode.

Applications

• Automotive chargers and converters
• High voltage auxiliary power supplies
• Inverters and PFC circuits
• Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific ordering suffix when sourcing components. The standard FGH20N60SFDTU variant does not carry automotive qualification markings. The FGH20N60SFDTU-F085 suffix explicitly denotes compliance with AEC-Q101 requirements. Ensure the procurement order matches the exact suffix required for the target application's reliability standards.

Selection Notes

Select this component for designs requiring low saturation voltage and fast switching speeds within a 600 V rating. The TO-247-3LD package provides robust thermal dissipation capabilities. Evaluate the gate charge and switching loss parameters against the intended switching frequency to ensure optimal efficiency and thermal management in the final system design.

Part Context

This device belongs to the Field Stop IGBT series developed by onsemi. It represents an evolution in silicon technology designed to improve efficiency over standard trench IGBTs. The product line targets high-power density applications where reducing energy loss during both conduction and switching transitions is critical for overall system performance.

Replacement Considerations

Direct replacements must match the 600 V rating, 20 A current capability, and TO-247-3LD footprint. Verify that substitute devices offer comparable saturation voltage and switching times to maintain original circuit efficiency and thermal profiles without redesigning the gate drive network.

FAQ

Does the FGH20N60SFDTU include an internal diode?

Yes, the datasheet specifies electrical characteristics for an integrated anti-parallel diode, including forward voltage and reverse recovery time.

What is the maximum operating junction temperature?

The absolute maximum ratings specify an operating junction temperature range of -55°C to +150°C.

How does the F085 suffix affect the device specifications?

The F085 suffix indicates that the device is qualified to the Automotive Requirements of AEC-Q101, whereas the standard version does not carry this specific qualification.