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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 60A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：339 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：208 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：730 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGH30N120FTDTU is a 1200V, 30A Trench IGBT utilizing field stop trench technology. It features a TO-247 package with a maximum collector-emitter voltage of 1200V and a continuous collector current of 30A at 100°C case temperature. The device exhibits a low saturation voltage of 1.6V at 30A and 15V gate drive. Switching characteristics include a turn-off loss of 1.16mJ and total switching loss of 1.70mJ under standard test conditions. Thermal resistance from junction to case is 0.38°C/W for the IGBT chip.
Feature Summary
- Field stop trench technology for superior conduction and switching performance
- High input impedance suitable for easy parallel operation
- Exceptional avalanche ruggedness for robust system reliability
Applications
- Induction heating systems
- Microwave oven power supplies
- Soft switching applications
Procurement Notes
Verify the component origin as Fairchild Semiconductor, which was acquired by onsemi. Confirm the datasheet revision matches the specific manufacturing lot requirements. Ensure the ordering suffix TU corresponds to the tape and reel packaging format if required by automated assembly processes. Validate RoHS compliance status against current environmental regulations.
Selection Notes
Select this component for designs requiring high-speed switching with low conduction losses in soft-switching topologies. The TO-247 package facilitates efficient thermal management through direct mounting to heatsinks. Consider the positive temperature coefficient of the saturation voltage when designing circuits that require multiple devices to be operated in parallel configurations.
Part Context
This device belongs to the FGH series of 1200V Trench IGBTs originally developed by Fairchild Semiconductor. The series is engineered to balance low saturation voltage with fast switching speeds. The FGH30N120FTD variant specifically targets medium-power industrial applications where efficiency and thermal stability are critical design constraints.
Replacement Considerations
Direct replacements within the same family include the FGH30N120FTD (tube packaging). Verify pinout compatibility and thermal resistance specifications before substituting with other manufacturers' 1200V 30A trench IGBTs.
FAQ
What is the maximum collector current rating?
The maximum continuous collector current is 60A at a case temperature of 25°C and 30A at a case temperature of 100°C.
Does the device include an integrated diode?
Yes, the datasheet provides electrical characteristics for an integrated diode, including forward voltage and reverse recovery time parameters.
What is the recommended gate-emitter voltage range?
The absolute maximum gate-emitter voltage is ±25V. Standard operation typically utilizes a 15V gate drive for optimal switching performance.
