FGH30N6S2

Overview

The FGH30N6S2 is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features a breakdown voltage of 600V and a continuous collector current rating of 30A at 25°C, with a maximum pulsed current of 90A. The device exhibits a typical saturation voltage of 1.8V at 30A and 25°C. It is housed in an isolated TO-220AB package designed for through-hole mounting.

Feature Summary

• High switching frequency capability suitable for hard-switching applications
• Integrated anti-parallel fast recovery freewheeling diode
• Low conduction loss due to optimized saturation voltage characteristics

Applications

• Switched-mode power supplies (SMPS)
• Motor control drives
• DC-DC converters

Procurement Notes

Verify the manufacturer source against official Fairchild or onsemi documentation. Confirm the specific suffix matches the required pin configuration and thermal specifications. Ensure compliance with RoHS directives if applicable to the project requirements.

Selection Notes

Select this component for circuits requiring 600V blocking capability and moderate current handling up to 30A. Evaluate the thermal resistance of the TO-220AB package against the expected power dissipation. Consider the switching speed requirements relative to the integrated diode recovery time.

Part Context

This IGBT belongs to the SMPS Series from Fairchild Semiconductor, designed specifically for high-efficiency power conversion. It combines MOS gate drive advantages with bipolar conduction efficiency. The series targets cost-effective solutions for industrial and consumer power electronics.

Replacement Considerations

Check datasheets for equivalent models such as the FGH30N60D or FGH40N60D from the same manufacturer family. Verify that substitute parts maintain identical pinout configurations and comparable Vce(sat) and switching times.