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Product Detailed Parameters
- Description：IGBT TRENCH FS 1000V 80A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 40A
- Power - Max：333 W
- Switching Energy：2.35mJ (on), 1.15mJ (off)
- Input Type：Standard
- Gate Charge：265 nC
- Td (on/off) @ 25°C：29ns/285ns
- Test Condition：600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：78 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The FGH40T100SMD is a Field Stop Trench IGBT manufactured by onsemi, designed for high-voltage power switching applications. It features a TO-247 through-hole package with a collector-emitter maximum voltage (VCEO) of 1 kV and a continuous collector current (Ic) of 40 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (Vce(sat)) of 2.3 V. It supports a maximum power dissipation (Pd) of 333 W and operates within a junction temperature range from -55°C to +175°C. The gate-emitter voltage limits are specified between -20 V and +20 V, with a maximum gate-emitter leakage current of 500 nA.
Feature Summary
- Utilizes Field Stop Trench technology to achieve low saturation voltage characteristics.
Applications
- High-voltage industrial motor drives
- Uninterruptible power supply (UPS) systems
- Solar inverters
Procurement Notes
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status via official datasheets prior to integration. Note that availability may be restricted in certain regions; consult distributor catalogs for current stock status and regional sales restrictions before initiating procurement processes.
Selection Notes
Select this component when a 1 kV blocking capability is required alongside moderate current handling in a standard TO-247 form factor. Ensure thermal management solutions support the 333 W dissipation rating. Verify that the driving circuitry accommodates the specified gate voltage limits and leakage currents for reliable operation under varying environmental conditions.
Part Context
This part belongs to onsemi's discrete IGBT portfolio, specifically utilizing Field Stop technology for improved performance. It serves as a high-voltage alternative to lower-rated devices like the FGH40N60SMD (600 V) and complements higher-voltage options such as the FGY40T120SMD (1.2 kV). The series targets robust power conversion needs where reliability and efficiency are critical.
Replacement Considerations
Direct pin-compatible replacements must match the 1 kV VCEO and TO-247 package. Evaluate alternatives based on comparable Vce(sat) and thermal resistance values. Cross-reference specific electrical parameters against the original datasheet to ensure functional equivalence in existing circuit designs.
