FGH40T65SPD-F155

Description：IGBT TRENCH FS 650V 80A TO-247-3
Series：-

SKU:501426c40dbd Category: Single IGBTs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO-247-3
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 40A
Power - Max：267 W
Switching Energy：1.16mJ (on), 280µJ (off)
Input Type：Standard
Gate Charge：35 nC
Td (on/off) @ 25°C：16ns/37ns
Test Condition：400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr)：34 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

Download product information

FGH40T65SPD-F155

Overview

The onsemi FGH40T65SPD-F155 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the Field Stop Trench (FS3) series. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 80 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCEsat) of 1.85 V. It operates within a junction temperature range of -55°C to +175°C and has a maximum power dissipation (Pd) of 267 W. The component is housed in a TO-247-3 package designed for through-hole mounting.

Feature Summary

Field Stop Trench technology providing optimized switching performance
High thermal stability with extended operating temperature range up to 175°C
Low saturation voltage for improved conduction efficiency

Applications

Industrial motor drives
Switched-mode power supplies
Inverter circuits

Procurement Notes

Verify the specific suffix F155 against official manufacturer documentation to confirm exact binning or testing criteria, as suffixes may denote specific electrical parameter ranges. Ensure the ordering part number matches the required FS3 generation specifications. Cross-reference the datasheet revision date to confirm compliance with current RoHS standards before finalizing procurement orders.

Selection Notes

Select this component when a 650 V rating and 80 A continuous current capability are required in a TO-247 form factor. The low VCEsat of 1.85 V makes it suitable for applications prioritizing conduction losses. Verify that the thermal management solution can handle the 267 W power dissipation rating under the specific operating conditions of the target design.

Part Context

This IGBT is part of onsemi's broader Field Stop Trench portfolio, which includes variants like the FGH40T100SMD and FGH75T65SHD. These devices share similar packaging and technological foundations but differ in voltage ratings and current capacities. The FGH40T65SPD-F155 specifically targets mid-power applications requiring robust performance in the 650 V class.