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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 40A
- Power - Max：238 W
- Switching Energy：138µJ (on), 52µJ (off)
- Input Type：Standard
- Gate Charge：80 nC
- Td (on/off) @ 25°C：16.4ns/86.4ns
- Test Condition：400V, 10A, 6Ohm, 15V
- Reverse Recovery Time (trr)：31.8 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGH40T65SQD-F155 is a P-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the Field Stop 4th Generation series. It features a TO-247 G03 package designed for through-hole mounting. The device supports a maximum continuous collector current of 60 A and a collector-emitter voltage rating of 650 V. Key electrical parameters include a maximum power dissipation of 333 W, a collector-emitter saturation voltage of 1.6 V, and a gate-emitter voltage limit of ±30 V. It operates within a temperature range of -55°C to 175°C and carries RoHS certification.
Feature Summary
- Field Stop 4th Generation technology for optimized switching performance
- P-channel configuration for high-side switching applications
- Robust thermal management capability with 333 W power dissipation
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix F155 against official datasheets to confirm pinout and packaging details. Ensure compatibility with existing thermal interface materials and mounting hardware for the TO-247 G03 footprint. Cross-reference manufacturer documentation for any recent lifecycle changes or alternative sourcing options.
Selection Notes
Select this component for designs requiring P-channel IGBTs with 650 V blocking capability. Compare the 1.6 V saturation voltage against system efficiency targets. Verify that the 60 A current rating meets peak load requirements while accounting for derating at elevated junction temperatures up to 175°C.
Part Context
This part belongs to onsemi's Field Stop 4th Generation IGBT lineup, which utilizes trench gate technology to reduce switching losses. The FGH prefix typically denotes a P-channel variant within the broader FGH family, offering complementary solutions to N-channel devices in bridge configurations.
Replacement Considerations
Check for direct replacements within the same FGH60T65 or FGH40T65 series families. Verify pin compatibility and electrical parameter equivalence before substituting with other manufacturers' P-channel IGBTs.
