FGH4L50T65SQD

Overview

The onsemi FGH4L50T65SQD is a Field Stop, Trench IGBT rated at 650 V and 50 A. It features a maximum junction temperature of 175°C and a typical saturation voltage of 1.6 V at 50 A. The device includes an integrated diode with a forward current of 40 A at 25°C. It utilizes a TO-247-4LD package with Kelvin emitter configuration for optimized switching performance.

Feature Summary

• Field stop 4th generation technology for low conduction and switching losses
• Positive temperature coefficient enabling easy parallel operation
• Integrated full-rated current diode within the same package

Applications

• Solar inverters
• Uninterruptible power supplies (UPS)
• Welders
• Telecommunications systems
• Energy storage systems (ESS)
• Power factor correction (PFC)

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status matches application requirements. Validate thermal management design against specified junction-to-case resistance values. Ensure gate drive voltages remain within absolute maximum ratings to prevent device degradation or failure during operation.

Selection Notes

Select this component when high efficiency in solar or UPS applications is required. The positive temperature coefficient facilitates reliable parallel configurations without complex balancing circuits. Verify that the integrated diode characteristics meet the specific reverse recovery requirements of the target circuit topology.

Part Context

This part belongs to onsemi's Field Stop 4th generation IGBT series. It combines trench gate technology with field stop structures to optimize switching speed and conduction loss. The TO-247-4LD package provides robust thermal dissipation capabilities suitable for industrial power electronics environments.

Replacement Considerations

Direct substitutes include FGHL50T65SQD and FGHL50T65MQDTL4. Verify pinout compatibility and electrical parameter alignment before implementation.