FGH50N3

Description：IGBT PT 300V 75A TO-247-3
Series：-

SKU:d7a6d28ce920 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT PT 300V 75A TO-247-3
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：300 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：240 A
Vce(on) (Max) @ Vge, Ic：1.4V @ 15V, 30A
Power - Max：463 W
Switching Energy：130µJ (on), 92µJ (off)
Input Type：Standard
Gate Charge：180 nC
Td (on/off) @ 25°C：20ns/135ns
Test Condition：180V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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FGH50N3

Overview

The onsemi FGH50N3 is a planar technology N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-frequency switching applications requiring low conduction losses. It features a maximum collector-emitter voltage of 300 V and a continuous collector current of 75 A at 25°C case temperature. The device operates within a junction temperature range of -55°C to +150°C and is housed in a TO-247-3LD short lead package with flange mount installation.

Feature Summary

Optimized for medium frequency switch mode power supplies
Low saturation voltage and turn-off energy loss
Positive temperature coefficient above 50 A
High ruggedness with defined short circuit withstand time

Applications

Switch Mode Power Supplies (SMPS)
Power conditioning circuits
Uninterruptible power supply systems

Procurement Notes

Verify the specific ordering suffix against official documentation, as variations may exist. Confirm that the component meets RoHS compliance standards if required by your manufacturing process. Ensure thermal management solutions are compatible with the TO-247-3LD package dimensions and mounting requirements specified in the datasheet.

Selection Notes

Select this IGBT when designing circuits operating at medium frequencies where minimizing conduction losses is critical. Consider the 300 V breakdown voltage and 75 A current rating to ensure adequate headroom for your application's peak loads. Evaluate the thermal resistance characteristics to determine appropriate heatsinking for sustained operation.

Part Context

This component belongs to onsemi's discrete IGBT portfolio, specifically engineered for high-voltage switching. It utilizes planar technology to achieve performance metrics suitable for modern power electronics. The device is distinct from MOSFETs due to its bipolar conduction mechanism, offering lower on-state voltage drops at higher currents.

Replacement Considerations

When substituting this part, verify that the replacement device matches the 300 V collector-emitter voltage rating and provides comparable continuous current capabilities. Ensure the new component fits the TO-247-3LD footprint and maintains similar switching speed characteristics to preserve circuit timing and efficiency.