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The FGH50N6S2 is a 600V N-Channel IGBT from the SMPS II Series by Fairchild Semiconductor. It features an integrated anti-parallel Stealth diode for efficient switching applications. The device supports a DC collector current of 75A and withstands a collector-to-emitter breakdown voltage of 600V. Key electrical parameters include a maximum power dissipation of 463W, a typical Vce(sat) of 2.7V, and operation within a temperature range of -55°C to +150°C. Packaged in TO-247, it is designed for high-power density requirements.
Verify the manufacturer source carefully due to historical integration changes between Fairchild and ON Semiconductor. Ensure the component matches the specific SMPS II series designation. Confirm RoHS compliance status as per the original Fairchild documentation. Check for any ordering suffix variations that may indicate package or tape-and-reel options distinct from the standard through-hole variant.
Select this component for applications requiring robust 600V blocking capability with high current handling up to 75A. The integrated diode simplifies circuit design by eliminating external freewheeling components. Consider thermal management solutions given the 463W power dissipation rating. Ensure gate drive voltages align with standard IGBT specifications to maintain optimal switching performance and reliability.
This part belongs to the SMPS II Series, specifically engineered for power conversion efficiency. It represents a transition period in semiconductor manufacturing where Fairchild designs were absorbed into broader portfolios. The TO-247 package provides mechanical stability and heat dissipation suitable for medium-to-high power electronics.
Public confirmed substitutes include FGH50N6S2D and FGH60N6S2. Verify pin compatibility and thermal resistance values when substituting. Ensure the replacement maintains the same anti-parallel diode configuration.