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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 100A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 50A
- Power - Max：340 W
- Switching Energy：2.7mJ (on), 740µJ (off)
- Input Type：Standard
- Gate Charge：230 nC
- Td (on/off) @ 25°C：32ns/160ns
- Test Condition：400V, 50A, 6Ohm, 15V
- Reverse Recovery Time (trr)：53 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The FGH50T65UPD is a single N-channel Field Stop Trench IGBT manufactured by onsemi. It features a 650 V collector-emitter voltage rating and supports a continuous collector current of 50 A at 25 °C. The device exhibits a maximum collector-emitter saturation voltage of 2.3 V and a gate-emitter leakage current of 400 nA. It operates within a temperature range of -55 °C to +175 °C, with a power dissipation capacity of 187 W. The component utilizes a TO-247 through-hole package for robust mounting in industrial applications.
Feature Summary
- Field Stop Trench technology for optimized switching performance
- High thermal stability supporting operation up to 175 °C
- Robust TO-247 through-hole packaging for high-current handling
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before integration. Confirm that the TO-247 pinout matches the target PCB footprint design. Ensure thermal management solutions accommodate the 187 W power dissipation rating under expected operating conditions.
Selection Notes
Select this component when a 650 V rating and 50 A continuous current capability are required in a standard through-hole package. Compare the 2.3 V saturation voltage against alternative trench IGBTs to evaluate conduction losses. Verify that the gate charge characteristics align with the intended driver circuit capabilities for efficient switching.
Part Context
This part belongs to the FGH series of Field Stop Trench IGBTs from onsemi. It shares architectural similarities with the FGH75T65UPD but offers lower current ratings. The product line targets high-efficiency power conversion applications requiring reliable switching at medium power levels.
Replacement Considerations
The FGH50T65SQD is a documented variant within the same product family. Verify pin compatibility and electrical parameter equivalence before substitution.
