FGH60N60SFDTU

Overview

The FGH60N60SFDTU is a Field Stop IGBT manufactured by onsemi, housed in a TO-247-3LD package. It features a collector-emitter voltage (VCES) of 600 V and a continuous collector current (IC) of 120 A at 25°C case temperature. The saturation voltage (VCE(sat)) is typically 2.3 V at IC = 60 A and VGE = 15 V. Maximum power dissipation reaches 378 W at 25°C. Switching characteristics include a turn-off delay time of 134 ns and a fall time of 31 ns at 25°C. Total switching loss is 2.46 mJ under standard test conditions.

Feature Summary

• Utilizes novel field stop technology to optimize performance for applications requiring low conduction and switching losses.
• Provides high current capability with a maximum collector current of 120 A at 25°C case temperature.
• Features fast switching dynamics and low saturation voltage to enhance efficiency in power conversion systems.

Applications

• Solar inverters
• Uninterruptible Power Supplies (UPS)
• Welding machines
• Power Factor Correction (PFC) circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking configurations. Confirm RoHS compliance status and lead-free material declarations prior to integration. Cross-reference the part number with the latest datasheet revision to validate electrical parameters and thermal characteristics for the intended operating environment.

Selection Notes

Select this component for designs requiring robust 600 V blocking capability and high current handling up to 120 A. Ensure the thermal management system can maintain the junction temperature within the -55°C to +150°C range. Evaluate gate resistance values to balance switching speed and electromagnetic interference, considering the device's dynamic characteristics under varying load conditions.

Part Context

This device belongs to onsemi's Field Stop IGBT series, designed specifically for high-efficiency power electronics. It integrates advanced semiconductor technology to minimize energy loss during both conduction and switching phases. The TO-247-3LD package facilitates efficient heat dissipation through the flange connection, supporting high-power density applications in industrial and renewable energy sectors.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Verify compatibility with alternative Field Stop IGBTs from onsemi or other manufacturers based on matching VCES, IC ratings, and package dimensions. Ensure that any replacement maintains equivalent switching speeds and thermal resistance characteristics to preserve system performance.

FAQ

What is the typical saturation voltage at full rated current?

The typical saturation voltage (VCE(sat)) is 2.3 V when the collector current is 60 A and the gate-emitter voltage is 15 V at 25°C.

Does the device include an integrated diode?

Yes, the datasheet provides electrical characteristics for an integrated diode, including forward voltage and reverse recovery time specifications.

What is the maximum power dissipation at elevated temperatures?

Maximum power dissipation is 378 W at a case temperature of 25°C and decreases to 151 W at a case temperature of 100°C.