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The FGH60N60SMD-F085 is a single N-channel Field Stop IGBT from onsemi, housed in a TO-247-3 through-hole package. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 60 A at 25°C, with a pulsed current rating of 120 A. The device exhibits a saturation voltage (Vce(sat)) of 1.8 V and a maximum power dissipation (Pd) of 600 W. It operates within a temperature range of -55°C to +175°C and holds AEC-Q101 qualification.
Verify component authenticity through authorized channels due to the part's end-of-life status. Confirm specific ordering suffixes match design requirements, as variations may exist. Request official datasheets and compliance certificates directly from onsemi or certified distributors to ensure traceability and quality standards are met before integration into production.
Select this component for designs requiring robust 600V switching capabilities with high current handling in a standard through-hole form factor. Ensure gate drive circuits accommodate the specified ±20 V limits. Evaluate thermal management solutions to maintain junction temperatures within the +175°C maximum limit under expected load conditions.
This device belongs to the FGH60N60SM_F085 series, representing onsemi's second-generation Field Stop IGBT technology. It is designed to offer improved efficiency compared to previous planar technologies. The product line targets applications demanding high reliability and performance in power conversion environments.
The related part number FGH60N60SMD is available. Verify if functional differences exist between the base model and the -F085 variant. Consult official substitution guides for cross-references with other 600V/60A TO-247 IGBTs if sourcing constraints require alternatives.