FGH60N60UFDTU

Overview

The FGH60N60UFDTU is a 600 V, 60 A N-channel Field Stop IGBT manufactured by onsemi. It features an integrated fast recovery diode and utilizes novel Field Stop technology to minimize conduction and switching losses. The device operates within a junction temperature range of -55 °C to +150 °C and is housed in a TO-247AB package with a flange mount configuration. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V at 60 A, a maximum pulsed collector current of 180 A, and a total gate charge of 192 nC. Thermal resistance from junction to case is specified at 0.33 °C/W for the IGBT.

Feature Summary

• Utilizes novel Field Stop IGBT technology to optimize performance for applications requiring low conduction and switching losses.
• Qualified to automotive requirements of AEC-Q101 for enhanced reliability in demanding environments.
• Features high current capability combined with low saturation voltage and fast switching characteristics.

Applications

• Automotive chargers and converters
• High voltage auxiliaries
• Inverters and PFC circuits
• UPS systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details and compliance status. Confirm that the component meets all necessary regulatory standards for the intended application environment. Ensure proper handling procedures are followed during installation to maintain device integrity.

Selection Notes

Select this component for designs prioritizing low switching loss and high current density in power conversion stages. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Validate gate drive conditions against the recommended 15 V operating level to ensure optimal switching performance and avoid exceeding absolute maximum ratings.

Part Context

This part belongs to onsemi's Field Stop IGBT series, designed specifically for high-efficiency power electronics. It represents an evolution in IGBT technology aimed at reducing energy consumption in automotive and industrial power systems. The device integrates robust protection features inherent to the Field Stop architecture.

Replacement Considerations

Direct substitutes must match the 600V/60A rating, TO-247 package, and Field Stop technology. Verify pinout compatibility and thermal characteristics before implementation. Cross-reference with other models in the FGH60N60 series or equivalent offerings from other manufacturers ensuring identical electrical specifications.

FAQ

What is the typical collector-emitter saturation voltage at rated current?

The typical VCE(sat) is 1.8 V when measured at IC = 60 A and VGE = 15 V.

Is this component suitable for automotive applications?

Yes, the FGH60N60UFDTU is qualified to the automotive requirements of AEC-Q101.

What is the maximum pulsed collector current capability?

The device supports a maximum pulsed collector current (ICM) of 180 A at TC = 25°C.