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The onsemi FGH60T65SHD-F155 is a Field Stop 4th Generation IGBT featuring a P-channel trench gate structure. It operates with a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 120 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage of 1.6 V and handles up to 349 W of power dissipation. It is housed in a TO-247 G03 through-hole package, supporting an operating temperature range from -55°C to +175°C.
Verify the specific suffix F155 against official datasheets to confirm packaging details. Ensure compatibility with existing thermal management solutions given the 349 W dissipation rating. Confirm RoHS compliance status through manufacturer documentation before integration into regulated products.
Select this component when high current handling and robust voltage ratings are required in a standard through-hole package. Compare the 120 A continuous current capability against system load requirements. Evaluate the 1.6 V saturation voltage impact on overall efficiency compared to alternative IGBT generations.
This part belongs to onsemi's Field Stop 4th Generation series, designed for high-efficiency power switching. It complements other devices in the FGH60T65 family, offering variations in packaging or specific electrical characteristics tailored for different industrial applications.
Check for direct substitutes within the same FGH60T65 series. Verify pinout compatibility and thermal resistance values when considering alternatives from other manufacturers.