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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 150A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：150 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
- Power - Max：375 W
- Switching Energy：300µJ (on), 70µJ (off)
- Input Type：Standard
- Gate Charge：128 nC
- Td (on/off) @ 25°C：23ns/120ns
- Test Condition：400V, 18.8A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：76 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGH75T65SQDT-F155 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Field Stop 4th Generation technology. It features a TO-247-4 package for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 150 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage (VCEsat) of 1.6 V and a maximum power dissipation (Pd) of 375 W. It operates within a temperature range of -55°C to +175°C, with a maximum gate-emitter voltage (VGEO) of ±20 V.
Feature Summary
- Field Stop 4th Generation technology for optimized switching performance
- Positive temperature coefficient for stable parallel operation
- High thermal stability supporting junction temperatures up to 175°C
Applications
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Electric welders
- Energy Storage Systems (ESS)
Procurement Notes
Verify the specific suffix F155 against official datasheets to confirm pinout and packaging details. Ensure compatibility with existing thermal management designs given the 375 W dissipation rating. Confirm RoHS compliance status for environmental regulations. Check for any recent Product Change Notifications or End-of-Life notices from onsemi before finalizing procurement plans.
Selection Notes
Select this component for high-power applications requiring low conduction losses and robust thermal performance. The 650 V rating suits medium-voltage AC/DC conversion systems. Consider the TO-247-4 package for adequate heat sinking capabilities. Evaluate drive circuit requirements for the ±20 V gate voltage limit. Compare total system efficiency needs against the 1.6 V saturation voltage characteristic.
Part Context
This IGBT belongs to onsemi's Field Stop 4th Generation series, designed for high-efficiency power conversion. It succeeds earlier generations like FS3, offering improved switching characteristics. The part is distinct from similar models such as FGH75T65SHD-F155 by its specific generation technology and package configuration. It targets industrial and renewable energy markets demanding reliable high-current switching.
Replacement Considerations
FGH75T65SHD-F155 is a related model in the same family but utilizes Field Stop 3rd Generation technology. Verify if the older generation meets specific efficiency or switching speed requirements. Other 650 V 150 A TO-247-4 IGBTs may require re-evaluation of gate drive voltages and thermal resistance parameters.
