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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 150A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：150 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
- Power - Max：-
- Switching Energy：307µJ (on), 266µJ (off)
- Input Type：Standard
- Gate Charge：128 nC
- Td (on/off) @ 25°C：44ns/276ns
- Test Condition：400V, 18.8A, 15Ohm, 15V
- Reverse Recovery Time (trr)：76 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：TO-247-4
- Grade：-
- Qualification：-
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Overview
The onsemi FGH75T65SQDTL4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the FS4 Trench family, utilizing silicon technology. It features a TO-247-4 through-hole package with a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 150 A at 25°C. The device exhibits a low collector-emitter saturation voltage of 1.6 V and supports a power dissipation (Pd) of 375 W. Operating within a temperature range of -55°C to +175°C, it includes an integrated fast recovery diode.
Feature Summary
- FS4 Trench Field-Stop technology for optimized switching performance
- Integrated fast recovery anti-parallel diode
- High thermal stability up to 175°C junction temperature
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's part number and date code against official documentation. Confirm RoHS compliance status via the specific datasheet or compliance statement provided by the supplier. Ensure the TO-247-4 package dimensions match design requirements before integration.
Selection Notes
Select this component for high-current applications requiring robust thermal performance and low conduction losses. The 650V rating suits medium-voltage industrial systems. Verify that the 150A continuous current capability aligns with the system's peak load demands and thermal management strategy.
Part Context
This IGBT belongs to onsemi's FS4 series, designed for high-efficiency power conversion. It represents a silicon-based solution distinct from the company's EliteSiC or hybrid modules. The TO-247-4 package facilitates efficient heat sinking in standard industrial form factors.
Replacement Considerations
Direct substitutes include other FS4 series devices with matching voltage and current ratings, such as FGH75T65SFD or FGH75T65SNLD. Verify pinout compatibility and thermal characteristics when considering alternatives.
