FGH75T65UPD-F085

Overview

The FGH75T65UPD-F085 is a Field Stop Trench IGBT manufactured by onsemi, designed for high-efficiency power conversion. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC) of 75 A at TC = 100°C. The device operates with a maximum junction temperature (TJ) of 175°C and offers a typical saturation voltage (VCE(sat)) of 1.69 V at IC = 75 A. Packaged in a TO-247-3LD form factor, it includes an integrated diode with a forward voltage of 2.1 V at IF = 50 A. Key electrical parameters include a short circuit withstand time of 10 µs and thermal resistance from junction to case of 0.4 °C/W.

Feature Summary

• Utilizes Novel Field Stop Trench IGBT technology to minimize conduction and switching losses.
• Features positive temperature coefficient characteristics to facilitate easy parallel operation.
• Includes an integrated anti-parallel diode with optimized reverse recovery performance.
• Qualified under AEC-Q101 standards and capable of PPAP requirements.

Applications

• Automotive chargers and converters
• Solar inverters
• Uninterruptible Power Supplies (UPS)
• Digital power generators

Procurement Notes

Verify the specific ordering suffix -F085 against official documentation to confirm tube packaging and quantity specifications. Ensure that the component meets RoHS compliance and lead-free requirements as stated in the datasheet. Confirm AEC-Q101 qualification status if automotive application standards are required for the project.

Selection Notes

Select this component for applications requiring low switching losses and high current capability at 650 V. Consider the 175°C maximum junction temperature for high-temperature environments. Evaluate the thermal resistance values for heat sink design. Verify gate drive requirements against the specified threshold voltage and total gate charge parameters.

Part Context

This part belongs to onsemi's Field Stop Trench IGBT series, which is engineered for automotive and industrial power electronics. The FGH75T65UPD variant specifically targets high-power density designs where efficiency and thermal performance are critical. The -F085 suffix denotes specific packaging and ordering details within this product line.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing should be performed using key parameters such as 650 V rating, 75 A current capacity, TO-247-3LD package, and Field Stop Trench technology.

FAQ

What is the maximum short circuit withstand time for the FGH75T65UPD-F085?

The device has a short circuit withstand time (SCWT) of 10 µs when tested at TC = 25°C, VGE = 15 V, and VCC ≤ 400 V.

Does the FGH75T65UPD-F085 have a positive temperature coefficient?

Yes, the datasheet explicitly lists a positive temperature coefficient as a feature to enable easy parallel operation.

What is the typical saturation voltage at full load?

The typical collector-emitter saturation voltage (VCE(sat)) is 1.69 V when the collector current (IC) is 75 A and the gate-emitter voltage (VGE) is 15 V.