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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 150A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：150 A
- Current - Collector Pulsed (Icm)：225 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 75A
- Power - Max：375 W
- Switching Energy：3.68mJ (on), 1.6mJ (off)
- Input Type：Standard
- Gate Charge：68 nC
- Td (on/off) @ 25°C：42ns/216ns
- Test Condition：400V, 75A, 3Ohm, 15V
- Reverse Recovery Time (trr)：85 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The FGH75T65UPD is a 650V, 75A Field Stop Trench IGBT manufactured by onsemi (formerly Fairchild Semiconductor). It utilizes Novel Field Stop Trench IGBT Technology to optimize performance for applications requiring low conduction and switching losses. The device features a maximum junction temperature of 175°C and a positive temperature coefficient for easy parallel operation. Key electrical characteristics include a typical collector-emitter saturation voltage of 1.65V at 75A and a short circuit withstand time exceeding 5µs at 25°C. It is housed in a TO-247 package with a maximum power dissipation of 375W at 25°C case temperature.
Feature Summary
- Utilizes Novel Field Stop Trench IGBT Technology for optimized efficiency
- Positive Temperature Coefficient facilitates easy parallel operation
- High current capability with a maximum junction temperature of 175°C
- Short Circuit Ruggedness exceeding 5µs at 25°C
Applications
- Solar Inverter
- UPS
- Digital Power Generator
Procurement Notes
Verify the component status as the datasheet indicates 'No Identification Needed' for full production or potentially obsolete depending on the specific revision date. Confirm authenticity through authorized distributors due to anti-counterfeiting policies. Check RoHS compliance documentation for environmental standards. Ensure the ordering suffix matches the required packaging quantity per tube.
Selection Notes
Select this component for designs requiring high current handling up to 150A pulsed and low saturation voltage. Consider the thermal resistance values for heatsink design, specifically the junction-to-case resistance. Evaluate gate charge requirements against driver capabilities. Ensure operating conditions remain within the safe operating area defined in the datasheet curves.
Part Context
This part belongs to the Field Stop Trench IGBT series designed for high-efficiency power conversion. It represents an evolution in trench gate technology aimed at reducing switching losses compared to standard planar devices. The product line targets renewable energy and industrial power supplies where thermal management and reliability are critical.
Replacement Considerations
Check for updated revisions from onsemi or Fairchild Semiconductor. Verify pinout compatibility if substituting with other TO-247 IGBTs. Ensure replacement parts meet the same voltage, current, and thermal specifications.
