SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FGHL40S65UQ is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes trench field-stop technology to achieve low saturation voltage and optimized switching performance. The device is rated for a maximum collector-emitter voltage of 650 V and supports a continuous collector current of 40 A at 25°C, with a pulsed current capacity of 80 A. Key electrical parameters include a typical collector-emitter saturation voltage of 1.8 V at 40 A and a gate-emitter threshold voltage range of 3.0 V to 4.5 V. The component operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247-3 through-hole package.
Verify the specific suffix 'Q' against the official datasheet to confirm AEC-Q101 qualification status. Check for recent Product Change Notifications regarding pin compatibility or material composition changes. Ensure the ordering part number matches the exact package variant required for the target PCB footprint.
Select this component when high efficiency and thermal stability are required in power conversion circuits. The 650V rating suits medium-voltage applications, while the 40A continuous current handles moderate load demands. Consider the thermal resistance characteristics of the TO-247-3 package for heatsink design calculations.
This IGBT belongs to the FGHL series from onsemi, designed specifically for automotive power electronics. The series emphasizes low loss and high reliability, meeting stringent automotive quality standards. It serves as a key switching element in modern electric vehicle powertrains and charging infrastructure.
Direct replacements must match the 650V/40A rating, TO-247-3 package, and trench field-stop topology. Verify equivalent short-circuit ratings and diode recovery characteristics. Cross-reference with other AEC-Q101 qualified IGBTs from the same manufacturer family.