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The FGHL50T65MQD is a Field Stop Trench IGBT from onsemi, utilizing 4th generation mid-speed technology with an integrated full current rated copak diode. It features a maximum junction temperature of +175°C and a positive temperature coefficient for parallel operation. Key electrical parameters include a collector-emitter voltage (VCES) of 650 V, a continuous collector current (IC) of 80 A at TC = 25°C, and a typical saturation voltage (VCE(sat)) of 1.45 V at IC = 50 A. The device is housed in a TO-247-3L package.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and traceability requirements. Confirm that the component meets all necessary regulatory standards for the intended application environment before finalizing procurement decisions.
Select this component based on its 650 V rating and 80 A continuous current capability at 25°C case temperature. Consider the thermal resistance values and the requirement for a gate-emitter voltage of 15 V during operation. Ensure the design accommodates the specified switching losses under the expected load conditions.
This part belongs to the FGHL50T65MQDTx series of Field Stop Trench IGBTs. It represents onsemi's 4th generation mid-speed technology, designed to offer high current capability and optimized switching performance for power conversion applications requiring robust reliability.
Direct substitutes within the same family include FGHL50T65MQDTL4. Verify pinout compatibility and electrical specifications when considering alternative packages or variants from different manufacturers.