FGHL50T65MQD

FGHL50T65MQD

$4.87
  • Description:IGBT TRENCH FS 650V 80A TO-247-3
  • Series:-

SKU:fbec9a3ce953 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 80A TO-247-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 50A
  • Power - Max:268 W
  • Switching Energy:1.05mJ (on), 700µJ (off)
  • Input Type:Standard
  • Gate Charge:94 nC
  • Td (on/off) @ 25°C:23ns/120ns
  • Test Condition:400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr):32 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

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FGHL50T65MQD

Overview

The FGHL50T65MQD is a Field Stop Trench IGBT from onsemi, utilizing 4th generation mid-speed technology with an integrated full current rated copak diode. It features a maximum junction temperature of +175°C and a positive temperature coefficient for parallel operation. Key electrical parameters include a collector-emitter voltage (VCES) of 650 V, a continuous collector current (IC) of 80 A at TC = 25°C, and a typical saturation voltage (VCE(sat)) of 1.45 V at IC = 50 A. The device is housed in a TO-247-3L package.

Feature Summary

  • Field stop 4th generation mid-speed IGBT technology
  • Full current rated copak Diode technology
  • Positive Temperature Co-efficient for easy parallel operating
  • Smooth & Optimized Switching

Applications

  • Solar Inverter
  • UPS, ESS
  • PFC, Converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and traceability requirements. Confirm that the component meets all necessary regulatory standards for the intended application environment before finalizing procurement decisions.

Selection Notes

Select this component based on its 650 V rating and 80 A continuous current capability at 25°C case temperature. Consider the thermal resistance values and the requirement for a gate-emitter voltage of 15 V during operation. Ensure the design accommodates the specified switching losses under the expected load conditions.

Part Context

This part belongs to the FGHL50T65MQDTx series of Field Stop Trench IGBTs. It represents onsemi's 4th generation mid-speed technology, designed to offer high current capability and optimized switching performance for power conversion applications requiring robust reliability.

Replacement Considerations

Direct substitutes within the same family include FGHL50T65MQDTL4. Verify pinout compatibility and electrical specifications when considering alternative packages or variants from different manufacturers.

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$4.87
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