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The FGHL75T65MQDTL4 is a single Insulated Gate Bipolar Transistor (IGBT) from the onsemi FS4 MID SPEED series, housed in a TO-247-4L package. It integrates a full-rated current diode within the same module. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. Key electrical parameters include a saturation voltage of 1.45 V and a power dissipation rating of 375 W. The component operates within a temperature range of -55°C to +175°C and utilizes through-hole mounting.
Verify the specific suffix TL4 against official datasheets to confirm the inclusion of the integrated diode and TO-247-4L pinout. Ensure compatibility with existing PCB footprints designed for four-terminal packages. Cross-reference RoHS compliance status with the latest manufacturer documentation before finalizing procurement orders.
Select this component when a combined switch and freewheeling diode solution is required in a single package. The 650V rating suits medium-voltage applications. Compare the 80A current capability and 1.45V saturation voltage against system requirements. Consider the TO-247-4L package size for thermal management constraints relative to standard three-terminal alternatives.
This part belongs to the onsemi FS4 family, which focuses on mid-speed performance characteristics. The FGHL75T65MQD variant serves as the base model without the integrated diode. The TL4 suffix specifically denotes the addition of the diode and the four-leaded package configuration, differentiating it from the standard three-terminal TO-247-3 versions.
FGHL75T65MQD serves as a functional substitute if the integrated diode is not required by the circuit design. Verify that the target application can accommodate the separate diode placement if switching to the three-terminal version.