FGL12040WD

Overview

The FGL12040WD is a trench field-stop (FS2) IGBT manufactured by onsemi, housed in a TO-264-3 package. It features a maximum collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 80A, with a pulsed current capacity of 100A. The device exhibits a typical saturation voltage of 2.9V at 15V gate drive and 40A collector current. Switching characteristics include a turn-on delay of 45ns and turn-off delay of 560ns under test conditions of 600V, 40A, and 23Ω gate resistance. Total gate charge is specified at 226nC, while reverse recovery time is 71ns. Maximum power dissipation is 391W, operating within a junction temperature range of -55°C to 150°C.

Feature Summary

• Incorporates FS2 trench technology for optimized switching performance and low conduction losses.
• Standard gate input type simplifies driver interface requirements.
• Robust thermal design supports high-power density applications through efficient heat dissipation.

Applications

• Industrial motor drives and inverters
• Uninterruptible power supplies (UPS)
• High-frequency welding equipment

Procurement Notes

Verify the specific ordering suffix and revision level against the official onsemi datasheet to ensure compatibility with required packaging and quality standards. Confirm that the component meets all relevant environmental compliance regulations applicable to your region before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring 1200V blocking capability with moderate current handling up to 80A. Evaluate thermal management strategies carefully, as the 391W power dissipation rating necessitates adequate heatsinking. Ensure gate drive voltages remain within the specified limits to maintain optimal switching speeds and prevent device degradation.

Part Context

This IGBT belongs to the FS2 series, representing an evolution in trench field-stop technology designed to balance conduction and switching losses. It serves as a discrete power switch alternative to modules in medium-power applications, offering a cost-effective solution for engineers needing reliable high-voltage switching in compact form factors.

Replacement Considerations

Consult official cross-reference guides for direct equivalents. Verify pinout compatibility and electrical parameters such as Vcesat and switching times before substituting with other 1200V trench IGBTs from different manufacturers.