SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FGM623S is a 600 V trench IGBT manufactured by Sanken Electric. It features an original trench structure designed to decrease gate capacitance, achieving high-speed switching and reducing switching loss for improved circuit efficiency. The device operates with a collector current of up to 18 A at a case temperature of 100 °C and 30 A at 25 °C. Key electrical parameters include a typical saturation voltage (VCE(sat)) of 1.5 V at IC = 30 A and a typical fall time (tf) of 120 ns at TJ = 25 °C. It utilizes a TO3PF-3L package with a bare lead frame compliant with RoHS standards.
Verify the specific revision status of the datasheet before procurement, as Sanken notes that product contents are subject to change without notice due to improvements. Confirm compliance with applicable environmental regulations such as the EU RoHS Directive prior to integration. Contact a Sanken sales representative to validate that the supplied components reflect the latest technical revisions and specifications.
Select this component for applications requiring high-speed switching and reduced power loss in 600 V systems. Ensure thermal management accommodates the specified junction temperature limits and power dissipation ratings. Verify that the drive circuitry can support the required gate-emitter voltage and charge characteristics for optimal performance within the safe operating area.
The FGM623S belongs to the Trench IGBT series from Sanken Electric. It is part of a family including related models such as FGT313, FGT312, FGT412, FGT612, FGM622S, FGM603, MGD623N, and MGD623S. These devices share similar design philosophies focused on efficiency and switching performance through trench technology implementations.
Potential substitutes within the same manufacturer lineup include FGM622S, FGM603, MGD623N, and MGD623S. Evaluate these alternatives based on specific current ratings, saturation voltage requirements, and package compatibility to ensure they meet the design constraints of the target application.
The maximum continuous collector current is 30 A at a case temperature of 25 °C and 18 A at a case temperature of 100 °C.
The original trench structure decreases gate capacitance, which achieves high-speed switching and reduces switching loss, thereby improving circuit efficiency.
The typical fall time (tf) is 120 ns when measured at a junction temperature of 25 °C.