FGP15N60UNDF

Overview

The FGP15N60UNDF is a single NPT IGBT manufactured by onsemi, housed in a TO-220-3 through-hole package. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 30 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.7 V and a power dissipation rating of 178 W. Operating within a temperature range of -55°C to +150°C, it includes a gate-emitter leakage current of 10 uA and withstands gate-emitter voltages between -20 V and 20 V.

Feature Summary

• Utilizes Non-Punch Through (NPT) technology for robust high-voltage performance
• Designed for efficient switching with low saturation voltage characteristics
• Engineered for reliable operation across extended industrial temperature ranges

Applications

• Switched-mode power supplies
• Motor control systems
• High-frequency inverters

Procurement Notes

Verify component authenticity through authorized channels due to End-of-Life status. Confirm RoHS compliance documentation matches specific manufacturing batches. Validate package integrity upon receipt to ensure pin alignment for TO-220-3 mounting requirements.

Selection Notes

Select this component for applications requiring 600V blocking capability with moderate current handling. Ensure thermal management solutions support the 178 W dissipation rating. Verify driver compatibility with the specified gate-emitter voltage limits and leakage specifications.

Part Context

This IGBT belongs to the FGP series from onsemi, designed for general-purpose power switching. It serves as a discrete solution for medium-power conversion tasks where cost-effective silicon technology meets reliability standards in standard through-hole packaging.

Replacement Considerations

Check datasheets for equivalent NPT IGBTs with matching 600V ratings and TO-220-3 packages. Verify pinout compatibility and thermal resistance values before substitution.