FGP20N6S2D

Overview

The FGP20N6S2D is a 600V N-Channel IGBT from the SMPS II Series, featuring an integrated Anti-Parallel Stealth Diode. It offers a continuous collector current of 28A at 25°C and 13A at 110°C, with a maximum pulsed current of 40A. The device has a typical gate charge of 30nC at VGE=15V and a low plateau voltage of 6.5V. At TJ=125°C, the typical fall time is 85ns. It supports 100kHz operation at 390V/7A and 200kHz at 390V/5A. Rated for 100mJ UIS energy, it operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Low gate charge and low plateau voltage reduce gate drive power requirements.
• High avalanche capability (UIS) ensures robustness against inductive switching stress.
• Soft recovery anti-parallel diode minimizes reverse recovery losses.

Applications

• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies

Procurement Notes

Verify the specific package variant during procurement, as the datasheet lists TO-220AB for FGP20N6S2D alongside TO-247 and TO-263 variants. Confirm that the component meets RoHS compliance standards required for your assembly process. Ensure handling precautions are followed to prevent electrostatic discharge damage to the insulated gate structure before installation.

Selection Notes

Select this component for high-voltage switched mode power supply designs requiring fast switching speeds and low conduction loss. Evaluate the thermal resistance and operating frequency limits based on the specific collector current and case temperature conditions. Consider the soft recovery characteristics of the integrated diode when designing snubber circuits or assessing electromagnetic interference in high-frequency applications.

Part Context

This part belongs to the Fairchild Semiconductor SMPS II Series, now under onsemi. It combines the fast switching speed of previous SMPS IGBTs with lower gate charge and plateau voltage. The series is engineered specifically for applications demanding low conduction loss, fast switching times, and high avalanche capability in high-voltage environments.

Replacement Considerations

Public confirmed substitute part numbers include FGH20N6S2D and FGB20N6S2D, which share identical electrical specifications but differ in package type (TO-247 and TO-263 respectively). Verify pinout compatibility and physical dimensions before substituting into existing PCB layouts.

FAQ

What is the maximum pulsed avalanche energy rating?

The device is rated for 100mJ of pulsed avalanche energy when tested with ICE = 7.0A, L = 4mH, and VDD = 50V.

How does the operating frequency change with collector current?

Maximum operating frequency decreases as collector current increases. For example, it supports 100kHz at 7A and 200kHz at 5A, both at 390V.

Is there an internal Zener diode for gate protection?

No, these devices do not have an internal monolithic Zener diode from gate to emitter. External gate protection is recommended if required.