FGP30N6S2

FGP30N6S2

$1.44
  • Description:IGBT 600V 45A TO-220-3
  • Series:-

SKU:2d9e12e28fc1 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 45A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):45 A
  • Current - Collector Pulsed (Icm):108 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 12A
  • Power - Max:167 W
  • Switching Energy:55µJ (on), 100µJ (off)
  • Input Type:Standard
  • Gate Charge:23 nC
  • Td (on/off) @ 25°C:6ns/40ns
  • Test Condition:390V, 12A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

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FGP30N6S2

Overview

The FGP30N6S2 is a 600V, N-Channel IGBT from the SMPS II Series. It features low gate charge and low plateau voltage to reduce gate drive power requirements. The device supports continuous collector currents of 45A at 25°C case temperature and 20A at 110°C. It offers a typical fall time of 90ns at 125°C and an avalanche energy rating of 150mJ. Packaged in TO-220AB, it provides a thermal resistance (junction-to-case) of 0.75°C/W.

Feature Summary

  • Low gate charge and low plateau voltage for reduced gate drive power
  • UIS rated with 150mJ avalanche capability
  • Fast switching speed with short delay times

Applications

  • Power Factor Correction (PFC) circuits
  • Full bridge topologies
  • Half bridge topologies
  • Push-Pull circuits
  • Uninterruptible power supplies

Procurement Notes

Verify the specific package variant against the datasheet table. The FGP30N6S2 designation corresponds strictly to the TO-220AB tube packaging containing 50 units per tube. Ensure ordering suffixes match this physical form factor to avoid receiving alternative packages like TO-247 or TO-263.

Selection Notes

Select this component for high-voltage switched mode power supply designs requiring low conduction loss and fast switching. Evaluate the operating frequency limits using the provided performance curves relative to the expected collector current and case temperature constraints.

Part Context

This part belongs to the Fairchild Semiconductor SMPS II series, which combines fast switching speeds with lower gate charge characteristics. The manufacturer was acquired by onsemi, but the original documentation retains the Fairchild branding.

Replacement Considerations

FGH30N6S2 (TO-247 package), FGB30N6S2 (TO-263AB package). These share identical electrical specifications but differ in physical mounting and thermal interface.

FAQ

What is the maximum pulsed avalanche energy?

The device is rated for 150mJ of pulsed avalanche energy under test conditions of ICE = 20A, L = 1.3mH, and VDD = 50V.

How does the gate plateau voltage affect operation?

The typical gate plateau voltage is 6.5V, which contributes to lower gate drive power requirements compared to standard IGBTs.

What is the thermal resistance from junction to case?

The thermal resistance (RθJC) is specified as 0.75°C/W.

FGP30N6S2FGP30N6S2
$1.44
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