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Product Detailed Parameters
- Description：IGBT NPT 600V 20A TO-220F-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 10A
- Power - Max：42 W
- Switching Energy：150µJ (on), 50µJ (off)
- Input Type：Standard
- Gate Charge：37 nC
- Td (on/off) @ 25°C：8ns/52.2ns
- Test Condition：400V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr)：37.7 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220F-3
- Grade：-
- Qualification：-
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Overview
The FGPF10N60UNDF is a short-circuit rated N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a TO-220F insulated package designed for through-hole mounting. The device supports a collector-emitter voltage of 600V and a continuous collector current of 15A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.2V and a power dissipation rating of 17W. The component utilizes silicon technology and is part of the manufacturer's portfolio for high-efficiency switching applications.
Feature Summary
- Short-circuit rated capability for enhanced system reliability
- Insulated TO-220F package for direct heatsink mounting
- Low saturation voltage to minimize conduction losses
Applications
- Motor drive circuits requiring short-circuit durability
- High-frequency switching power supplies
- Industrial inverter systems
Procurement Notes
Verify the specific ordering suffix against official documentation, as variations may exist. Confirm compliance with RoHS standards and REACH regulations prior to integration. Check for any product discontinuance notifications or process change notices issued by the manufacturer to ensure long-term availability and consistency.
Selection Notes
Select this component for designs requiring robust short-circuit protection in medium-power applications. Ensure the thermal management solution accommodates the 17W power dissipation limit within the specified operating temperature range. Verify that the gate drive circuitry aligns with the IGBT's switching characteristics and voltage thresholds.
Part Context
This IGBT belongs to the UNDF series from onsemi, which focuses on providing short-circuit ruggedness for motor control and power conversion. The TO-220F package allows for efficient heat transfer while maintaining electrical isolation from the mounting surface, making it suitable for compact industrial designs.
Replacement Considerations
Cross-reference with FGP10N60UNDF for potential pin-compatible alternatives within the same family. Verify electrical parameters such as VCE(sat) and short-circuit withstand time before substitution.
