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The FGPF30N45TTU is a trench field-stop Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor, now part of onsemi. It features a 450V collector-emitter breakdown voltage and a continuous collector current rating of 30A at 25°C. The device utilizes PDP Trench technology to achieve low saturation voltage and optimized switching performance. It is housed in an insulated TO-220F-3 package designed for through-hole mounting. The component operates within a junction temperature range of -55°C to +150°C and is classified as a single N-channel IGBT.
Verify the manufacturer origin carefully, as Fairchild Semiconductor was acquired by onsemi. Confirm that the specific suffix TTU corresponds to the intended packaging and compliance requirements. Check for obsolescence status, as this component may be discontinued or subject to process change notifications. Ensure the supplier provides valid traceability documentation for quality assurance purposes.
Select this component when a 450V rated IGBT with 30A continuous current capability is required. The insulated TO-220F-3 package simplifies heatsinking without additional insulators. Consider the thermal resistance characteristics for your specific cooling solution. Verify that the switching speed and gate drive requirements align with your circuit design constraints.
This part belongs to the FGPF series of trench field-stop IGBTs originally developed by Fairchild Semiconductor. The series is characterized by low conduction losses and robust avalanche ratings. Following the acquisition by onsemi, these products continue to be supported under the new corporate structure while maintaining original technical specifications.
The FGPF45N45TTU is a higher current variant within the same family offering 45A capacity. Other compatible trench IGBTs from the same lineage include the FGPF30N30TDTU for lower voltage applications.