FGPF4565

$1.02

Description：IGBT TRENCH FS 650V TO-220F-3
Series：-

SKU:832d3bedf962 Category: Single IGBTs Brand: Fairchild Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V TO-220F-3
Series：-
Mfr：Fairchild Semiconductor
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：170 A
Vce(on) (Max) @ Vge, Ic：1.88V @ 15V, 30A
Power - Max：30 W
Switching Energy：-
Input Type：Standard
Gate Charge：40.3 nC
Td (on/off) @ 25°C：11.2ns/40.8ns
Test Condition：400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220F-3
Grade：-
Qualification：-

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FGPF4565

Overview

The FGPF4565 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor, now part of onsemi. It utilizes field stop trench IGBT technology, optimized for Intense Pulsed Light (IPL) applications. The device features a collector-emitter voltage rating of 650 V and is housed in a TO-220F-3 through-hole package. Key electrical characteristics include a typical saturation voltage (VCE(sat)) of 1.35 V to 1.5 V, ensuring low conduction losses. The component is designed for high current capability and efficient thermal performance.

Feature Summary

Utilizes innovative field stop trench IGBT technology for superior switching performance
Optimized specifically for Intense Pulsed Light (IPL) applications
Delivers high current capability combined with low saturation voltage
Provides efficient thermal management through the TO-220F-3 package design

Applications

Intense Pulsed Light (IPL) systems
High-power industrial switching applications
Pulse power supply circuits

Procurement Notes

Verify the manufacturer designation carefully, as Fairchild Semiconductor's semiconductor division was acquired by onsemi. Ensure the ordering suffix matches the required packaging variant. Confirm that the specific lot date code meets project requirements. Cross-reference the datasheet version to ensure alignment with the latest electrical specifications. Validate the package marking against the official product identification guide.

Selection Notes

Select this component when IPL-specific optimization is required. The field stop technology offers better trade-offs between switching speed and conduction loss compared to standard trench IGBTs. Consider the 650 V rating for medium-voltage isolation needs. Evaluate the TO-220F-3 package for adequate heat dissipation in the target enclosure. Compare VCE(sat) values against system efficiency targets.

Part Context

The FGPF4565 belongs to Fairchild's series of field stop trench IGBTs. This family targets high-performance pulsed applications where low saturation voltage is critical. The technology differentiates it from conventional planar or standard trench designs by reducing tail current during turn-off. It represents a specialized solution within the broader IGBT portfolio for lighting and pulse power sectors.

Replacement Considerations

Public confirmed substitute part numbers are not explicitly listed in the provided source material. Verify compatibility with direct replacements such as the FGPF4533 only if datasheet parameters align perfectly. Consult onsemi documentation for updated equivalent listings.