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The FGPF50N33BTTU is a single-channel N-channel trench IGBT manufactured by Fairchild Semiconductor. It features a collector-emitter breakdown voltage of 330V and a maximum continuous collector current of 50A, with a pulsed current rating of 160A. The device exhibits an on-state voltage of 1.5V at 20A and 15V gate drive. Total gate charge is specified as 35nC. Maximum power dissipation is rated at 43W. The component utilizes a TO-220F full-pack through-hole package.
Verify the specific ordering suffix to confirm the exact packaging configuration, as variations exist between tube and tape-and-reel formats. Confirm that the procurement source provides original manufacturer documentation or authorized distributor certification to ensure component authenticity. Check for RoHS compliance status if environmental regulations apply to the final assembly. Ensure the supplier can provide traceability data for quality assurance purposes.
Select this component when designing circuits requiring a 330V blocking capability with moderate current handling up to 50A. The low on-state voltage characteristic makes it suitable for efficiency-critical applications. Consider the thermal resistance and package size constraints associated with the TO-220F form factor during the mechanical design phase. Evaluate the gate charge requirements against the driving circuit's output capability to ensure adequate switching speeds.
This part belongs to the family of trench IGBTs developed by Fairchild Semiconductor specifically targeting high-performance power switching needs. The 'FGPF' prefix typically denotes a specific generation of trench technology devices. These components are engineered to replace older planar IGBT designs, offering improved switching characteristics and lower conduction losses for modern electronic power conversion architectures.
The datasheet indicates the FGPF50N33BT series is obsolete and not in production. Verify availability of direct substitutes from the same manufacturer or cross-reference with other 330V, 50A trench IGBTs ensuring pinout and electrical parameter compatibility before substitution.