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The FGPF70N30TTU is a 70-ampere, 300-volt N-channel Power MOSFET manufactured by Fairchild Semiconductor. This component utilizes the company's proprietary Trench FET technology to achieve low on-resistance and high switching efficiency. It is housed in a TO-247AD insulated package, which provides robust mechanical stability and effective thermal dissipation for high-power applications. The device features a maximum continuous drain current of 70A at 25°C case temperature and a gate threshold voltage typically ranging from 2V to 4V. Key electrical parameters include a maximum drain-source breakdown voltage of 300V and a typical on-state resistance of 0.045 ohms.
Verify the manufacturer marking and date code against official Fairchild Semiconductor documentation to ensure authenticity. Confirm that the part number suffix matches the exact specification required for your design. Request a datasheet copy directly from authorized distributors or the manufacturer to validate electrical characteristics before procurement.
Select this component when designing circuits requiring high current handling with moderate voltage ratings. Ensure the thermal design accommodates the power dissipation limits specified in the datasheet. Verify that the gate drive voltage aligns with the threshold specifications to guarantee full enhancement and minimize conduction losses during operation.
This part belongs to Fairchild's Trench FET series, designed for general-purpose power switching. It serves as a replacement for older planar MOSFET technologies in similar voltage and current classes. The TO-247AD package is standard for through-hole mounting in industrial and automotive power electronics assemblies.
Check pinout compatibility and thermal resistance values when substituting. Verify that alternative parts meet or exceed the 300V breakdown voltage and 70A current rating. Ensure the replacement device supports the same package type or requires adapter modifications.