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Product Detailed Parameters
- Description：IGBT 600V 14A TO-220F-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：21 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 7A
- Power - Max：45 W
- Switching Energy：270µJ (on), 3.8mJ (off)
- Input Type：Standard
- Gate Charge：24 nC
- Td (on/off) @ 25°C：120ns/410ns
- Test Condition：300V, 7A, 470Ohm, 15V
- Reverse Recovery Time (trr)：65 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220F-3
- Grade：-
- Qualification：-
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Overview
The FGPF7N60LSDTU is a Fairchild Semiconductor N-channel Power MOSFET belonging to the UniFET-II series. It features a 600V drain-source voltage rating and a continuous drain current of 6.5A at case temperature. The device utilizes advanced planar DMOS technology to achieve a maximum on-resistance of 1.25 ohms at 10V gate drive. Packaged in a TO-220F-3 insulated housing, it supports through-hole mounting with an operating junction temperature range from -55°C to 150°C. Key electrical characteristics include a gate charge of 17nC and an input capacitance of 730pF.
Feature Summary
- UniFET-II planar DMOS technology for optimized on-resistance and switching performance
- Insulated TO-220F package design for enhanced thermal management and safety
- High avalanche energy capability for robust operation in inductive load circuits
Applications
- Switch-mode power supplies (SMPS)
- High-voltage motor control circuits
- General-purpose inverters
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the presence of the UniFET-II series designation and correct package type. Request original manufacturer documentation or authorized distributor certificates to ensure compliance with technical parameters and avoid counterfeit components.
Selection Notes
Select this component for designs requiring high-voltage isolation and reliable thermal dissipation. The TO-220F package provides necessary insulation for direct heatsink mounting without additional insulators. Ensure gate drive voltages remain within the specified limits to maintain optimal on-state resistance and switching efficiency.
Part Context
This part belongs to Fairchild's UniFET-II family of high-voltage MOSFETs. It shares architectural similarities with other devices in the series but is distinguished by its specific voltage and current ratings. The insulated package variant offers advantages over standard TO-220 versions in applications requiring galvanic isolation between the drain and heatsink.
Replacement Considerations
Potential substitutes include FDPF7N60NZT and FCP7N60. Verify pinout compatibility and thermal resistance values before substitution. Ensure replacement parts meet the same voltage and current requirements for safe circuit operation.
