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The FGPF7N60RUFDTU is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 15 A at 25°C. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 30 W of power in a TO-220F package. Key electrical characteristics include a maximum gate-emitter voltage of ±20 V, a typical saturation voltage of 2.2 V at 15 A, and a short-circuit ruggedness rating of 10 microseconds at 100°C with a 15 V gate drive.
Verify the manufacturer origin as Fairchild Semiconductor or its successor entity onsemi due to corporate acquisitions. Confirm the specific suffix 'RUFDTU' matches the required tape-and-reel packaging format if automated assembly is planned. Check for RoHS compliance status as older Fairchild stock may vary. Ensure the component is sourced from authorized distributors to avoid counterfeit parts.
Select this IGBT for applications requiring moderate current handling with high voltage blocking capabilities. The 600V rating suits general industrial and consumer power conversion systems. Consider the thermal resistance of the TO-220F package for heat dissipation requirements. Compare the short-circuit withstand time against system protection circuit speeds to ensure adequate safety margins during fault events.
This component belongs to Fairchild's RUF series of Insulated Gate Bipolar Transistors. The series is engineered to provide low conduction and switching losses while maintaining robust short-circuit ruggedness. It serves as a discrete power switch solution for medium-power electronic designs where efficiency and reliability are critical performance factors.
Public confirmed substitute part numbers: SGH30N60RUFDTU, FGH60N60UFDTU.