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The FGS15N40LTF is a single N-channel IGBT manufactured by Fairchild Semiconductor, designed for high-efficiency power switching applications. It features a maximum collector-emitter voltage (Vceo) of 400 V and a continuous collector current (Ic) of 15 A at 25 °C. The device operates within a junction temperature range of -55 °C to +175 °C and utilizes a TO-220AB through-hole package. Key electrical parameters include a typical saturation voltage (Vce(sat)) of 1.6 V at 15 A and a gate threshold voltage ranging from 3.0 V to 5.0 V. The component integrates an anti-parallel fast recovery diode with a reverse recovery time (trr) of approximately 180 ns.
Verify the manufacturer origin as Fairchild Semiconductor or its successor entities, noting that acquisition history may affect part marking. Confirm RoHS compliance status and specific suffix codes against official datasheets to ensure correct pinout and electrical specifications. Request batch traceability documentation for quality assurance purposes prior to final procurement decisions.
Select this component when a 400 V rating and 15 A continuous current capacity are required for medium-power switching tasks. Ensure the application circuit can handle the specified gate charge and peak current requirements. Verify that the thermal management solution maintains the junction temperature below the 175 °C limit under worst-case operating conditions and ambient temperatures.
This IGBT belongs to the FGS series, which is engineered for general-purpose power switching. The series combines MOSFET input characteristics with bipolar output conductivity, offering superior performance over standard MOSFETs in high-voltage, high-current scenarios. It serves as a core switching element in various industrial and consumer electronic power conversion architectures.
Direct substitutes must match the 400 V / 15 A specification and TO-220AB package. Potential equivalents include the FGS15N40D or FGS15N60T, provided their voltage ratings and pin configurations are compatible. Always verify thermal resistance values and diode recovery characteristics before implementing any cross-brand replacement.