ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT FS 1200V 200A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：400 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 100A
- Power - Max：866 W
- Switching Energy：3.1mJ (on), 1.6mJ (off)
- Input Type：Standard
- Gate Charge：284 nC
- Td (on/off) @ 25°C：46.4ns/209.6ns
- Test Condition：600V, 50A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：152 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Download product information
Overview
The FGY100T120SWD is a Field Stop VII (FS7) N-channel IGBT with an integrated Gen7 diode, housed in a TO-247-3LD package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 200 A at 25°C. The saturation voltage is 1.7 V at 100 A. Switching losses are 3.1 mJ for turn-on and 1.6 mJ for turn-off under standard test conditions. The device supports a maximum junction temperature of 175°C and includes RoHS compliance.
Feature Summary
- Utilizes Field Stop VII technology for optimized switching and conduction performance
- Positive temperature coefficient enables reliable parallel operation
- Integrated Gen7 diode ensures smooth transitions and low reverse recovery energy
Applications
- Boost and Inverter circuits in Solar Systems
- Uninterruptible Power Supplies (UPS)
- Energy Storage Systems (ESS)
Procurement Notes
Verify the specific ordering suffix to confirm the package type and lead-free status. Confirm that the required thermal resistance values match the application's cooling design. Ensure gate drive voltages remain within the specified ±20 V limit to prevent damage. Check for any specific handling requirements related to electrostatic discharge during assembly.
Selection Notes
Select this component for high-efficiency applications requiring low switching losses at high frequencies. The positive temperature coefficient facilitates easy paralleling for higher current demands. Verify that the thermal management system can handle the power dissipation at the expected operating junction temperature up to 175°C.
Part Context
This device belongs to onsemi's FS7 IGBT family, designed for energy infrastructure markets. It complements other variants like the FGY100T120RWD, offering faster switching characteristics suitable for boost and inverter topologies where efficiency and power density are critical design parameters.
Replacement Considerations
Direct replacements include other FS7 series devices such as FGY75T120SWD or FGY140T120SWD, provided pin compatibility and electrical ratings meet the circuit requirements. Verify that the substitute maintains similar switching loss profiles and thermal characteristics.
