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The FGY140T120SWD is a Field Stop VII (FS7) N-channel IGBT with an integrated Gen7 diode, housed in a TO-247-3LD package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 140 A at 100°C. The device exhibits a saturation voltage of 1.7 V at 25°C and supports a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.13 °C/W for the IGBT and 0.23 °C/W for the diode. Switching losses are optimized, with turn-on loss at 12.5 mJ and turn-off loss at 5.1 mJ under standard test conditions.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and compliance status. Ensure that the procurement channel sources genuine components directly from authorized distributors or the manufacturer to guarantee authenticity and traceability. Cross-reference the part number with the latest datasheet revision to confirm electrical parameters match design requirements before finalizing orders.
Select this component for applications requiring high efficiency and robust thermal performance up to 175°C. The positive temperature coefficient facilitates parallel configurations for increased current handling. Designers must account for the specific switching energy values provided in the datasheet when calculating gate drive resistance and thermal management solutions for solar, UPS, or ESS architectures.
This device belongs to onsemi's FS7 IGBT family, designed for high-efficiency power conversion. It integrates advanced trench field-stop technology with a fast recovery diode. The TO-247-3LD package offers a balance of high current density and ease of mounting for industrial power electronics applications.
Direct substitutes within the same FS7 series include FGY100T120SWD and FGY75T120SWD, which share similar packaging and technology but differ in current ratings. Verify pinout compatibility and thermal resistance specifications when considering alternative models from other manufacturers.
The maximum operating junction temperature is 175°C.
Yes, the device features a positive temperature coefficient, which allows for easy parallel operation to increase current capacity.
The thermal resistance from junction to case for the IGBT is 0.13 °C/W.