FGY60T120SWD

Overview

The FGY60T120SWD is an N-channel Field Stop VII (FS7) IGBT with a Gen7 Diode in a TO-247-3LD package. It features a 1200 V collector-emitter voltage and a 60 A continuous collector current at 100°C. The saturation voltage is 1.7 V typical at 25°C. Switching losses are 1.6 mJ turn-on and 0.9 mJ turn-off at 600 V, 30 A. Gate charge is 174 nC. Thermal resistance junction-to-case is 0.24 °C/W for the IGBT and 0.41 °C/W for the diode.

Feature Summary

• Maximum junction temperature of 175°C
• Positive temperature coefficient for easy parallel operation
• Smooth and optimized switching characteristics
• RoHS compliant

Applications

• Boost and Inverter in Solar System
• UPS
• Energy Storage System

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and compliance status. Confirm that the TO-247-3LD mechanical dimensions match the target PCB footprint requirements before finalizing component selection.

Selection Notes

Evaluate thermal management capabilities based on the 0.24 °C/W junction-to-case resistance. Ensure gate drive circuits can handle the 174 nC total gate charge efficiently. Verify that the 1200 V rating provides adequate margin for the specific DC bus voltage levels in the intended application topology.

Part Context

This device belongs to the FS7 IGBT family utilizing advanced field stop technology. It is designed to provide low conduction and switching losses compared to previous generations. The integrated Gen7 Diode complements the IGBT performance for high-efficiency power conversion applications.

Replacement Considerations

Check datasheets for other FS7 series parts like FGY75T120SWD or FGY100T120SWD if higher current ratings are required. Verify pinout compatibility and thermal resistance values when substituting with similar packages from different manufacturers.