FGY75N60SMD

FGY75N60SMD

  • Description:IGBT FS 600V 150A POWERTO-247-3
  • Series:-

SKU:c7bca75403fb Category: Brand:

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Product Detailed Parameters

  • Description:IGBT FS 600V 150A POWERTO-247-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):150 A
  • Current - Collector Pulsed (Icm):225 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 75A
  • Power - Max:750 W
  • Switching Energy:2.3mJ (on), 770µJ (off)
  • Input Type:Standard
  • Gate Charge:248 nC
  • Td (on/off) @ 25°C:24ns/136ns
  • Test Condition:400V, 75A, 3Ohm, 15V
  • Reverse Recovery Time (trr):55 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3 Variant
  • Supplier Device Package:PowerTO-247-3
  • Grade:-
  • Qualification:-

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FGY75N60SMD

Overview

The FGY75N60SMD is a field-stop trench gate IGBT manufactured by onsemi, designed for high-power switching applications. It features a 600V collector-emitter breakdown voltage and a maximum continuous collector current of 150A. The device utilizes a TO-247-3 through-hole package to facilitate efficient thermal management in demanding environments. This component integrates advanced semiconductor technology to achieve low conduction losses and robust switching performance.

Feature Summary

  • Field-stop trench gate architecture for optimized switching characteristics
  • High current handling capability suitable for industrial power systems
  • Robust thermal design within the TO-247-3 package

Applications

  • Industrial motor drives
  • Switched-mode power supplies (SMPS)
  • Inverter circuits

Procurement Notes

Verify the manufacturer marking and part number against official onsemi documentation to ensure authenticity. Confirm that the TO-247-3 package dimensions match the required PCB footprint. Check for any specific ordering suffixes that may indicate variations in packaging or lead frame material, as these do not alter the electrical function but affect logistics.

Selection Notes

Select this component when a 600V rating and 150A current capacity are required in a standard through-hole configuration. Ensure the application's thermal dissipation requirements align with the capabilities of the TO-247-3 package. Compare switching speed and saturation voltage parameters against system efficiency targets to confirm suitability for the specific frequency and load conditions.

Part Context

This IGBT belongs to onsemi's high-performance power transistor lineup, utilizing field-stop technology to enhance efficiency compared to conventional designs. It serves as a critical switching element in medium-to-high power conversion systems, offering reliability and performance consistent with industrial-grade standards.

Replacement Considerations

Direct substitutes include other 600V, 150A field-stop IGBTs in the TO-247-3 package from compatible manufacturers. Verify pinout compatibility and thermal resistance values before implementation.

FGY75N60SMDFGY75N60SMD

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