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Product Detailed Parameters
- Description：IGBT FS 1200V 150A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：150 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 75A
- Power - Max：503 W
- Switching Energy：5mJ (on), 2.32mJ (off)
- Input Type：Standard
- Gate Charge：214 nC
- Td (on/off) @ 25°C：42ns/171ns
- Test Condition：600V, 75A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：307 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The FGY75T120SWD is an N-channel Field Stop VII (FS7) IGBT with a co-packaged Gen7 diode, housed in a TO247-3LD package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 75 A at 100°C. The device supports a maximum junction temperature of 175°C and offers low switching losses, including Eon of 5.00 mJ and Eoff of 2.32 mJ at 600 V and 75 A. Its thermal resistance from junction to case is 0.21 °C/W for the IGBT and 0.35 °C/W for the diode.
Feature Summary
- Positive temperature coefficient enables easy parallel operation for higher current capabilities.
- Smooth and optimized switching characteristics reduce overall system losses.
- High temperature tolerance allows stable operation up to 175°C junction temperature.
Applications
- Boost and Inverter circuits in Solar Systems
- Uninterruptible Power Supplies (UPS)
- Energy Storage Systems (ESS)
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the procurement channel provides traceability data matching the assembly plant code and date codes found on the component marking diagram.
Selection Notes
Select this component for high-efficiency applications requiring low switching and conduction losses. Consider the positive temperature coefficient when designing parallel configurations to ensure balanced current sharing across multiple devices without complex control loops.
Part Context
This part belongs to the FS7 family of IGBTs, utilizing novel field stop technology and Gen7 diodes. It is designed specifically for high-efficiency operations in infrastructure applications like solar inverters and energy storage systems where power density and reliability are critical.
Replacement Considerations
Direct replacements within the same series include FGY4L75T120SWD, which utilizes a TO247-4L package instead of the TO247-3LD form factor. Designers must account for pinout differences and mechanical footprint variations when substituting these components.
FAQ
What is the typical turn-off switching loss (Eoff) at 600V and 75A?
At a collector-emitter voltage of 600 V and a collector current of 75 A, the typical turn-off switching loss (Eoff) is 2.32 mJ.
Does the FGY75T120SWD support parallel operation?
Yes, the device features a positive temperature coefficient, which facilitates easy parallel operation by ensuring uniform current distribution among multiple devices.
What is the maximum rated collector current at a case temperature of 100°C?
The maximum rated continuous collector current (IC) drops to 75 A when the case temperature (TC) is maintained at 100°C.
