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The FH102A-TR-E is an RF transistor manufactured by onsemi, belonging to the FH102 series. It is a composite NPN epitaxial planar silicon device housed in an MCP package. The component integrates two transistors within a single unit, providing high mounting efficiency and thermal equilibrium. Designed for high-frequency low-noise amplifier applications, it offers excellent pair capability suitable for differential amplification circuits.
Verify the manufacturer designation as onsemi or Sanyo Semicon Device, as historical data indicates both entities produced this part. Confirm the specific suffix TR-E matches the required tape-and-reel packaging configuration. Ensure the MCP package type aligns with the target PCB footprint requirements before finalizing procurement orders.
Select this component when differential amplification requires matched transistor pairs with superior thermal tracking. The integrated composite structure simplifies layout compared to discrete dual-transistor solutions. Verify that the high-frequency low-noise specifications meet the system's signal integrity requirements for the intended operating band.
This part is part of the FH102 family of composite transistors. It serves as a specialized RF component designed to replace discrete matched pairs. The integration of two chips into one package reduces board space and improves consistency in high-frequency analog applications requiring precise differential signal processing.
The FH102A is functionally equivalent to two separate 2SC5226 transistors placed in a single package. Designers may consider FH102A variants from other manufacturers if available, ensuring the MCP package dimensions and electrical characteristics remain compatible.