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Product Detailed Parameters
- Description：IGBT H BRIDGE 1700V 18A I4PAK5
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Configuration：Half Bridge
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：18 A
- Power - Max：140 W
- Vce(on) (Max) @ Vge, Ic：6V @ 15V, 16A
- Current - Collector Cutoff (Max)：100 µA
- Input Capacitance (Cies) @ Vce：2.4 nF @ 25 V
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：i4-Pac™-4, Isolated
- Supplier Device Package：ISOPLUS i4-PAC™
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Overview
The FII24N170AH1 is an obsolete high-voltage IGBT phase-leg manufactured by IXYS, integrating a single NPT3 IGBT and a SONIC-FRDTM diode in an ISOPLUS i4-PACTM package. It features a collector-emitter voltage of 1700 V and a continuous collector current of 18 A at 25°C. The device exhibits a maximum saturation voltage of 6 V and a typical fast reverse recovery time of 45 ns for the integrated diode.
Feature Summary
- Integrates an NPT3 IGBT with low saturation voltage and positive temperature coefficient for easy paralleling.
- Includes a SONIC-FRDTM diode characterized by fast reverse recovery and low forward voltage.
- Utilizes an ISOPLUS i4-PACTM package providing electrical isolation between the tab and pins.
Applications
- Single Phase-Leg Buck-Boost Chopper
- H-Bridge Power Supplies
- Induction Heating Systems
- Four Quadrant DC Drives
- Three Phase Bridge AC Drives
Procurement Notes
This component is officially marked as obsolete by the manufacturer. Verify availability through secondary market channels or authorized distributors holding remaining stock. Confirm datasheet revision status and check for potential end-of-life notices before finalizing design integration to ensure long-term supply stability.
Selection Notes
Select this part for applications requiring electrically isolated phase-leg configurations in high-voltage circuits. The integrated diode simplifies circuit topology compared to discrete combinations. Evaluate thermal management requirements based on the specified junction-to-case resistance values for both the IGBT and diode components under varying load conditions.
Part Context
The FII24N170AH1 belongs to IXYS' high-power semiconductor portfolio designed for industrial power conversion. It combines switching and freewheeling functions within a single insulated package. This configuration reduces parasitic inductance and improves reliability in demanding power electronics environments.
Replacement Considerations
No verified public substitute part numbers are available for this obsolete component. Designers must evaluate alternative phase-leg modules or discrete IGBT and diode combinations that match the 1700V rating and package footprint constraints.
FAQ
What is the isolation voltage rating of the ISOPLUS i4-PACTM package?
The package provides an isolation voltage (VISOL) of 2500 Vrms when tested at 50/60Hz for one second.
Does the device exhibit a positive temperature coefficient?
Yes, the integrated NPT3 IGBT features a positive temperature coefficient, which facilitates safe parallel operation.
What is the typical reverse recovery time of the integrated diode?
The integrated SONIC-FRDTM diode has a typical fast reverse recovery time (tfi) of 45 ns.
