FIO50-12BD

Description：IGBT NPT 1200V 50A ISOPLUS I4PAC
Series：-

SKU:2f760583d1c1 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 50A ISOPLUS I4PAC
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 30A
Power - Max：200 W
Switching Energy：4.6mJ (on), 2.2mJ (off)
Input Type：Standard
Gate Charge：150 nC
Td (on/off) @ 25°C：-
Test Condition：600V, 30A, 39Ohm, 15V
Reverse Recovery Time (trr)：150 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：i4-Pac™-5
Supplier Device Package：ISOPLUS i4-PAC™
Grade：-
Qualification：-

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FIO50-12BD

Overview

The IXYS FIO50-12BD is a bidirectional switch module integrating an NPT3 IGBT and HiPerFRED diodes in an ISOPLUS i4-PAC package. It features a collector-emitter voltage of 1200 V, a continuous collector current of 50 A at 25°C, and a forward voltage of 2.6 V at 25°C. The device includes fast switching characteristics with turn-on energy of 4.6 mJ and turn-off energy of 2.2 mJ. Thermal resistance from junction to case is 0.6 K/W for the IGBT and 1.3 K/W per diode. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Integrates NPT3 IGBT with low saturation voltage and positive temperature coefficient for easy paralleling.
Includes HiPerFRED diodes featuring fast reverse recovery and low leakage current.
Utilizes ISOPLUS i4-PAC package with isolated back surface and low coupling capacity between pins and heatsink.

Applications

Matrix converters
AC controllers
Switches to control bidirectional current flow by a single control signal

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm datasheet version and revision history match the delivered units. Check for phase-out status indicators as this specific model may be discontinued. Ensure storage conditions comply with specified temperature limits to maintain performance integrity.

Selection Notes

Select based on required voltage ratings and thermal management capabilities. Evaluate gate resistor values against switching energy requirements for optimal performance. Consider parallel operation benefits provided by the positive temperature coefficient. Verify package compatibility with existing heatsinking solutions and mounting force specifications.

Part Context

This component belongs to IXYS' high-power semiconductor portfolio designed for industrial applications. It combines advanced IGBT technology with fast recovery diodes in a compact form factor. The series targets efficient power conversion systems requiring robust bidirectional switching capabilities.