Single Bipolar Transistors FJE3303TU product image

FJE3303TU

$0.14
  • Description:TRANS NPN 400V 1.5A TO-126-3
  • Series:-

SKU:577a2fef4f1b Category: Brand:

  
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FJE3303TU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 400V 1.5A TO-126-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FJE3303TU

  • Description:TRANS NPN 400V 1.5A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):400 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 500mA, 1.5A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 500mA, 2V
  • Power - Max:20 W
  • Frequency - Transition:4MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for FJE3303TU

FJE3303TU

Single Bipolar Transistors Overview

The onsemi FJE3303TU is a high-voltage fast-switching NPN power transistor housed in a TO-126 package. It supports a maximum collector-emitter voltage of 400 V and a continuous collector current of 1.5 A, with a peak pulse current rating of 3 A. The device features a collector-base breakdown voltage of 700 V and an emitter-base voltage limit of 9 V. It dissipates up to 20 W at 25°C case temperature and operates within a junction temperature range of -65°C to +150°C. The component includes three terminals: Emitter (Pin 1), Collector (Pin 2), and Base (Pin 3).

Single Bipolar Transistors Feature Summary

  • High voltage capability for robust operation in demanding electrical environments.
  • Fast switching speed suitable for high-frequency applications.
  • Designed specifically for electronic ballast and switching regulator circuits.

Single Bipolar Transistors Applications

  • Electronic ballasts
  • Switching regulators

Single Bipolar Transistors Procurement Notes

Verify the datasheet revision level and manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm that the specific ordering suffix matches the required packaging configuration. Ensure compliance with RoHS standards if applicable to your manufacturing process. Cross-reference pinout details against the official mechanical dimensions provided in the documentation.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation combined with rapid switching transitions. Evaluate the thermal management requirements carefully, as the 20 W dissipation rating depends on maintaining the specified case temperature. Consider the safe operating area curves to ensure reliable performance under varying load conditions and ambient temperatures.

Single Bipolar Transistors Part Context

This part belongs to the family of high-voltage NPN power transistors designed for efficient power conversion. Originally manufactured by Fairchild Semiconductor, it is now distributed under the onsemi brand. The TO-126 package provides a balance between power handling capabilities and ease of mounting for through-hole assembly processes.

Single Bipolar Transistors Replacement Considerations

FJE3303H2TU

Single Bipolar Transistors FAQ

What are the absolute maximum ratings for collector current?

The DC collector current is rated at 1.5 A, while the pulse collector current can reach 3 A with a pulse width of 5 ms and a duty cycle not exceeding 10%.

How is the TO-126 package configured for this transistor?

The TO-126 package has three pins: Pin 1 is the Emitter, Pin 2 is the Collector, and Pin 3 is the Base.

What is the typical turn-on time for resistive loads?

Under test conditions of VCC = 125V, IC = 1A, IB1 = 0.2A, IB2 = -0.2A, and RL = 125Ω, the turn-on time is typically 1.1 µs.

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