FJP5200RTU

Single Bipolar Transistors Overview

The FJP5200RTU is an NPN epitaxial silicon power transistor manufactured by onsemi, formerly Fairchild Semiconductor. It features a TO-220 package with tube packing and an hFE1 R grade classification. Key electrical parameters include a collector-base voltage of 250 V, a collector-emitter breakdown voltage of 250 V, and a continuous collector current rating of 17 A. The device supports a total power dissipation of 80 W at 25°C case temperature, with a junction-to-case thermal resistance of 1.25 °C/W. Operating temperatures range from -50°C to +150°C.

Single Bipolar Transistors Feature Summary

• High current capability for robust power handling
• Wide Safe Operating Area (S.O.A) ensuring reliable operation under varying conditions
• Excellent gain linearity designed to minimize total harmonic distortion in audio applications

Single Bipolar Transistors Applications

• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix RTU corresponds to the required hFE1 R grade binning and TO-220 tube packaging configuration. Confirm that the component originates from the Fairchild Semiconductor product line now managed by onsemi. Ensure the procurement documentation explicitly references the FJP5200 datasheet Rev. C to validate technical specifications against the requested part number.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage NPN switching or amplification up to 250 V and 17 A. Consider the TO-220 package constraints for thermal management, as the device dissipates up to 80 W. Evaluate the need for complementary PNP transistors, such as the FJP1943, if push-pull amplifier topologies are utilized in the design architecture.

Single Bipolar Transistors Part Context

The FJP5200 belongs to a family of high-power NPN transistors originally developed by Fairchild Semiconductor. It serves as a complement to the FJP1943 PNP transistor. Alternative packages within this performance class include the TO-264 (2SC5200), TO3P (2SC5242), and TO220F (FJPF5200), offering varying power dissipation capabilities for different enclosure and thermal requirements.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers include FJP5200OTU, which shares the same TO-220 package but utilizes the hFE1 O grade classification.