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The FJX597JCTF is an N-channel silicon Junction Field-Effect Transistor (JFET) manufactured by onsemi. It operates in a depletion mode with a maximum drain current of 1 mA and power dissipation of 100 mW. The device features a gate-drain breakdown voltage of -20 V and a gate-source cut-off voltage ranging from -0.6 V to -1.5 V. Drain current at zero gate-source voltage typically falls between 150 µA and 240 µA. It utilizes a SOT-323 surface-mount package and supports junction temperatures up to 150 °C.
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest product data sheet or environmental declaration before finalizing procurement orders.
Select this component when designing low-current JFET stages requiring high input impedance and stable bias characteristics. Ensure the circuit design accommodates the specified gate-source cut-off voltage range and maintains operation within the 100 mW power dissipation limit under all expected ambient temperature conditions.
This part belongs to the Fairchild Semiconductor JFET family, now managed by onsemi following corporate acquisition. The FJX597 series represents small-signal N-channel devices optimized for analog signal processing in communication equipment. The 'JCTF' suffix indicates the specific surface-mount packaging configuration.
Check for direct cross-reference equivalents such as the FJC597 series or generic 2N5457/2N5458 types if pinout compatibility allows. Verify that substitute components match the -20 V breakdown rating and SOT-323 footprint dimensions.