FKI06108

Single FETs, MOSFETs Overview

The FKI06108 is a 60 V N-channel Trench Power MOSFET manufactured by Sanken Electric USA Inc. It features a maximum continuous drain current of 39 A and a low on-resistance (RDS(ON)) of 9.2 mΩ max at VGS = 10 V. The device supports 4.5 V gate drive with a total gate charge (Qg) of 16.9 nC, enabling high-speed switching. Packaged in TO-220F, it includes an integrated body diode with a reverse recovery time of 34.8 ns. The component is RoHS compliant and has been tested for uniformity.

Single FETs, MOSFETs Feature Summary

• Low on-resistance and total gate charge for efficient power conversion
• Capable of operation with 4.5 V gate drive voltage
• High-speed switching performance with optimized body diode characteristics

Single FETs, MOSFETs Applications

• DC-DC converters
• Synchronous rectification circuits
• General-purpose power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific revision status before procurement, as the datasheet indicates this model is not recommended for new designs. Confirm that the TO-220F package variant matches your thermal management requirements. Ensure compatibility with existing PCB footprints and mounting hardware specifications to avoid integration issues during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V rating and 39 A continuous current capacity are required within a TO-220F package. Consider the 9.2 mΩ RDS(ON) for conduction loss calculations at 10 V gate drive. Evaluate the 16.9 nC gate charge against your driver capabilities if operating at lower voltages like 4.5 V. Verify thermal derating curves for your specific ambient temperature conditions.

Single FETs, MOSFETs Part Context

This part belongs to Sanken's lineup of trench power MOSFETs designed for general-purpose electronic equipment. It serves as a switching element in power electronics applications requiring moderate voltage and current handling. The TO-220F package provides robust mechanical stability and thermal dissipation capabilities suitable for through-hole mounting on heatsinks.

Single FETs, MOSFETs Replacement Considerations

FKI06108 is marked as not recommended for new designs. No direct substitute part numbers are documented in the provided source material. Designers should consult Sanken Electric for updated alternatives or verify pin-compatible replacements independently.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the FKI06108?

The maximum pulsed drain current (IDM) is 78 A, provided the pulse width is less than or equal to 100 µs and the duty cycle is less than or equal to 1%.

Does the FKI06108 support 4.5 V gate drive?

Yes, the device is capable of being driven by a 4.5 V gate voltage, with a maximum RDS(ON) of 11.2 mΩ under these conditions.

What is the reverse recovery time of the internal body diode?

The source-to-drain diode reverse recovery time (trr) is typically 34.8 ns when tested at IF = 28.5 A and di/dt = 100 A/µs.