FKI07174

Single FETs, MOSFETs Overview

The FKI07174 is a N-channel Trench Power MOSFET manufactured by Sanken Electric. It features a Drain-to-Source Voltage (VDS) of 75 V and a Continuous Drain Current (ID) of 31 A at TC = 25 °C. The device exhibits a maximum Static Drain-to-Source On-Resistance (RDS(ON)) of 14.1 mΩ at VGS = 10 V and ID = 22.8 A, with a typical value of 10.4 mΩ. Total Gate Charge (Qg) is specified as 15.0 nC at VGS = 4.5 V and 33.0 nC at VGS = 10 V. The component operates within a Junction Temperature range up to 150 °C and utilizes a TO-220F package.

Single FETs, MOSFETs Feature Summary

• Capable of operation with a 4.5 V gate drive voltage
• Features low total gate charge for high-speed switching applications
• Includes 100% Unclamped Inductive Load (UIL) testing

Single FETs, MOSFETs Applications

• DC-DC converters
• Synchronous Rectification
• Power Supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision prior to procurement, as the document indicates this part is not recommended for new designs. Confirm that the TO-220F package dimensions and pinout align with existing board layouts. Ensure thermal management solutions account for the junction-to-case thermal resistance values provided in the specifications to maintain safe operating temperatures during continuous operation.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring a 75 V breakdown voltage and moderate current handling capabilities around 31 A. Consider the RDS(ON) characteristics at both 10 V and 4.5 V gate drive levels when designing control logic. Evaluate the thermal performance against the application's ambient temperature requirements, utilizing the provided derating curves to ensure the power dissipation limits are not exceeded under worst-case conditions.

Single FETs, MOSFETs Part Context

This N-channel MOSFET belongs to Sanken Electric's lineup of trench technology power devices designed for efficient power conversion. The TO-220F package provides an insulated mounting option suitable for direct heatsink attachment without additional insulators. The device integrates body diode characteristics necessary for synchronous rectification topologies commonly found in modern switching power supply architectures.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly states 'Not Recommended for New Designs.' Engineers should consult Sanken Electric for updated alternatives or equivalent components from other manufacturers that meet the same electrical specifications and package constraints.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current capability?

The FKI07174 supports a pulsed drain current (IDM) of 62 A, provided the pulse width is less than or equal to 100 µs and the duty cycle does not exceed 1%.

How does the on-resistance vary with gate voltage?

The maximum RDS(ON) is 14.1 mΩ at VGS = 10 V. At a lower gate drive of VGS = 4.5 V, the maximum RDS(ON) increases to 15.9 mΩ under corresponding test conditions.