FMG1G50US60L

Overview

The FMG1G50US60L is a molded type Insulated Gate Bipolar Transistor (IGBT) power module manufactured by Fairchild Semiconductor. It features a maximum collector current of 50A and a maximum power dissipation of 250W. The device has a maximum collector-emitter voltage rating of 600V. The typical on-state collector-emitter voltage is 2.8V when measured at a gate voltage of 15V and a collector current of 50A.

Feature Summary

• Insulated Gate Bipolar Transistor technology providing low conduction and switching losses
• Molded package construction designed for short circuit ruggedness
• Single IGBT configuration within a compact molding type module

Applications

• Industrial motor drives
• Power supply inverters
• High frequency switching applications

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation to confirm electrical characteristics, as this component may be obsolete or discontinued. Ensure that the replacement part matches the required voltage, current, and thermal specifications for the intended circuit design before procurement.

Selection Notes

Select this module for applications requiring high voltage handling and moderate current capacity in a single-phase configuration. Consider the thermal management requirements associated with the 250W power dissipation rating and ensure the mounting interface supports the molded package dimensions for reliable heat transfer.

Part Context

This component belongs to the FMG series of IGBT modules from Fairchild Semiconductor. These modules are engineered for power electronics applications where efficiency and reliability are critical. The series typically offers various current and voltage ratings to suit different power levels.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative modules based on matching electrical parameters and mechanical footprint.